View BCR16CS-16LBB00_173455.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Preliminary Datasheet
BCR16CS-16LB
Triac Medium Power Use
Features
IT (RMS) : 16 A VDRM : 800 V IFGTI, IRGTI, IRGT III : 30 mA The product guaranteed maximum junction temperature of 150C Non-Insulated Type Planar Passivation Type R07DS0226EJ0100 Rev.1.00 Dec 14, 2010
Outline
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) )
4 2, 4 1. 2. 3. 4. T1 Terminal T2 Terminal Gate Terminal T2 Terminal
1
2
3 3 1
Applications
Contactless AC switch, light dimmer, electronic flasher unit, hair drier, control of household equipment such as TV sets, stereo systems, refrigerator, washing machine, infrared kotatsu, carpet, electric fan, solenoid driver, small motor control, solid state relay, copying machine, electric tool, electric heater control, and other general purpose control applications
Maximum Ratings
Parameter Repetitive peak off-state voltageNote1 Non-repetitive peak off-state voltageNote1 Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Notes: 1. Gate open. Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg -- Symbol VDRM VDSM Ratings 16 160 106.5 5 0.5 10 2 - 40 to +150 - 40 to +150 1.3 Unit A A A2s W W V A C C g Voltage class 16 800 960 Conditions Commercial frequency sine full wave Note3 360 conduction Tc = 125C 60Hzsinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Unit V V
Typical value
R07DS0226EJ0100 Rev.1.00 Dec 14, 2010
Page 1 of 7
BCR16CS-16LB
Preliminary
Electrical Characteristics
Parameter Repetitive peak off-state current On-state voltage Gate trigger voltageNote2 Symbol IDRM VTM VFGT VRGT VRGT IFGT IRGT IRGT VGD Rth (j-c) (dv/dt)c Min. -- -- -- -- -- -- -- -- 0.2/0.1 -- 10/1 Typ. -- -- -- -- -- -- -- -- -- -- -- Max. 2.0 1.5 1.5 1.5 1.5 30 30 30 -- 1.4 -- Unit mA V V V V mA mA mA V C/W V/s Test conditions Tj = 150C, VDRM applied Tc = 25C, ITM = 25 A, Instantaneous measurement Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Tj = 25C, VD = 6 V, RL = 6 , RG = 330 Tj = 125C/150C, VD = 1/2 VDRM Junction to caseNote3 Note4 Tj = 125C/150C
Gate trigger currentNote2
Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note5 commutating voltage Notes: 2. 3. 4. 5.
Measurement using the gate trigger characteristics measurement circuit. Case temperature is measured on the T2 tab. The contact thermal resistance Rth (c-f) in case of greasing is 1.0C/W. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Commutating voltage and current waveforms (inductive load)
Supply Voltage
Time (di/dt)c Time Time VD
Test conditions 1. Junction temperature Tj = 125C/150C 2. Rate of decay of on-state commutating current (di/dt)c = - 8.0 A/ms 3. Peak off-state voltage VD = 400 V
Main Current Main Voltage (dv/dt)c
R07DS0226EJ0100 Rev.1.00 Dec 14, 2010
Page 2 of 7
BCR16CS-16LB
Preliminary
Performance Curves
Maximum On-State Characteristics
103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 100 0.5 1.0 1.5 200
Rated Surge On-State Current
Surge On-State Current (A)
180 160 140 120 100 80 60 40 20 0 100 2 3 4 5 7 101 2 3 4 5 7 102
On-State Current (A)
Tj = 150C
Tj = 25C
2.0 2.5 3.0 3.5 4.0
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current (Tj = tC) x 100 (%) Gate Trigger Current (Tj = 25C)
Gate Characteristics (I, II and III)
3 2
Gate Trigger Current vs. Junction Temperature
103 7 5 4 3 2 102 7 5 4 3 2
VGM = 10V
PG(AV) = 0.5W PGM = 5W IGM = 2A
Typical Example
Gate Voltage (V)
101 7 5 3 2 100 7 5 3 2
IRGT III
VGT = 1.5V
IFGT I, IRGT I
10-1 7 IFGT I, IRGT I, IRGT III VGD = 0.1V 5 1 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 10
101 -60 -40 -20 0 20 40 60 80 100 120 140 160
Gate Current (mA)
Junction Temperature (C)
Gate Trigger Voltage (Tj = tC) x 100 (%) Gate Trigger Voltage (Tj = 25C)
Gate Trigger Voltage vs. Junction Temperature
103 7 5 4 3 2 102 7 5 4 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 160
Maximum Transient Thermal Impedance Characteristics (Junction to case)
Typical Example
Transient Thermal Impedance (C/W)
102 2 3 5 7 103 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
Junction Temperature (C)
Conduction Time (Cycles at 60Hz)
R07DS0226EJ0100 Rev.1.00 Dec 14, 2010
Page 3 of 7
BCR16CS-16LB
Preliminary
Allowable Case Temperature vs. RMS On-State Current
160 140
Maximum On-State Power Dissipation
40
On-State Power Dissipation (W)
30 360 Conduction Resistive, 25 inductive loads 20 15 10 5 0 0 2 4 6 8 10 12 14 16 18 20
Case Temperature (C)
35
120 Curves apply regardless of conduction angle 100 80 60 40
360 Conduction 20 Resistive, inductive loads 0 0 2 4 6 8 10 12 14 16 18 20
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs. RMS On-State Current
160
Allowable Ambient Temperature vs. RMS On-State Current
160
Ambient Temperature (C)
120 100 80 60
120 x 120 x t2.3 100 x 100 x t2.3
Ambient Temperature (C)
140
All fins are black painted aluminum and greased
140 120 100 80 60 40 20 0 0
Natural convection No fins Curves apply regardless of conduction angle Resistive, inductive loads
60 x 60 x t2.3
Curves apply 40 regardless of conduction angle 20 Resistive, inductive loads Natural convection 0 0 2 4 6 8 10 12 14 16 18 20
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current (Tj = tC) x 100 (%) Repetitive Peak Off-State Current (Tj = 25C)
Repetitive Peak Off-State Current vs. Junction Temperature
Holding Current (Tj = tC) x 100 (%) Holding Current (Tj = 25C)
5 3 Typical Example 2 105 7 5 3 2 104 7 5 3 2 103 7 5 3 2 102 -60 -40 -20 0 20 40 60 80 100 120 140160 103 7 5 4 3 2 102 7 5 4 3 2
Holding Current vs. Junction Temperature
Typical Example
101 -60 -40 -20 0 20 40 60 80 100 120 140 160
Junction Temperature (C)
Junction Temperature (C)
R07DS0226EJ0100 Rev.1.00 Dec 14, 2010
Page 4 of 7
BCR16CS-16LB
Latching Current vs. Junction Temperature
103 7 5 3 2 102 7 5 3 2 101 7 5 3 T +, G+ 2 2 Typical Example T2-, G- 100 0 40 80 -40
Preliminary
Breakover Voltage vs. Junction Temperature
Breakover Voltage (Tj = tC) x 100 (%) Breakover Voltage (Tj = 25C)
160 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100 120 140 160
Typical Example
Latching Current (mA)
Distribution
T2+, G- Typical Example
120
160
Junction Temperature (C)
Junction Temperature (C)
Breakover Voltage (dv/dt = xV/s) x 100 (%) Breakover Voltage (dv/dt = 1V/s)
160 140 120 100 80 60 40 20
Breakover Voltage (dv/dt = xV/s) x 100 (%) Breakover Voltage (dv/dt = 1V/s)
Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=125C)
Typical Example Tj = 125C
Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=150C)
160 140 120 100 80 60 40
Typical Example Tj = 150C
III Quadrant
III Quadrant
I Quadrant
I Quadrant
20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Rate of Rise of Off-State Voltage (V/s)
Rate of Rise of Off-State Voltage (V/s)
Commutation Characteristics (Tj=125C)
Critical Rate of Rise of Off-State Commutating Voltage (V/s) Critical Rate of Rise of Off-State Commutating Voltage (V/s)
102 7 5 3 2
Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT Time
Commutation Characteristics (Tj=150C)
7 5 3 2 101 7 5 3 2 Minimum 100 7
Time Main Voltage (dv/dt)c VD Main Current (di/dt)c IT Time
Typical Example Tj = 125C IT = 4A = 500s VD = 200V f = 3Hz
Typical Example Tj = 150C IT = 4A = 500s VD = 200V f = 3Hz
101 Minimum 7 Characteristics 5 Value 3 2
III Quadrant
I Quadrant
I Quadrant
100 7
Characteristics Value
III Quadrant
3
5 7 101
23
5 7 102
23
3
5 7 101
23
5 7 102
23
Rate of Decay of On-State Commutating Current (A/ms)
Rate of Decay of On-State Commutating Current (A/ms)
R07DS0226EJ0100 Rev.1.00 Dec 14, 2010
Page 5 of 7
BCR16CS-16LB
Gate Trigger Current vs. Gate Current Pulse Width
Gate Trigger Current (tw) x 100 (%) Gate Trigger Current (DC)
103 7 5 4 3 2 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102
Preliminary
Typical Example IFGT I IRGT I IRGT III
Gate Current Pulse Width (s)
Gate Trigger Characteristics Test Circuits
6 6
Recommended Circuit Values Around The Triac
Load C1
6V V
A 330
6V V
A 330
R1
C0
R0
Test Procedure I 6
Test Procedure II
C1 = 0.1 to 0.47F C0 = 0.1F R1 = 47 to 100 R0 = 100
6V V
A 330
Test Procedure III
R07DS0226EJ0100 Rev.1.00 Dec 14, 2010
Page 6 of 7
BCR16CS-16LB
Preliminary
Package Dimensions
Package Name LDPAK(S)-(1) JEITA Package Code SC-83 RENESAS Code PRSS0004AE-B Previous Code LDPAK(S)-(1) / LDPAK(S)-(1)V MASS[Typ.] 1.30g
Unit: mm
4.44 0.2 10.2 0.3
(1.4)
8.6 0.3
+ 0.3 - 0.5
10.0
(1.5)
(1.5)
2.49 0.2 0.2 0.1 + 0.1 -
7.8 7.0
2.2
1.37 0.2 1.3 0.2 2.54 0.5
0.3 3.0 + 0.5 -
0.2 0.86 + 0.1 -
0.4 0.1
2.54 0.5
Ordering Information
Orderable Part Number BCR16CS-16LB#B00 BCR16CS-16LB-A1#B00 BCR16CS-16LB-T11#B00 Packing Tube Tube Embossed Tape Quantity 50 pcs. 50 pcs. 1000 pcs. Remark -- A1 Lead form Taping direction "T1"
R07DS0226EJ0100 Rev.1.00 Dec 14, 2010
1.7
1.3 0.15
7.8 6.6
Page 7 of 7
Notice
1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 3. 4. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. 6. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. 7. Renesas Electronics products are classified according to the following three quality grades: "Standard", "High Quality", and "Specific". The recommended applications for each Renesas Electronics product depends on the product's quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application categorized as "Specific" without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an application categorized as "Specific" or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics. The quality grade of each Renesas Electronics product is "Standard" unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; safety equipment; and medical equipment not specifically designed for life support. "Specific": Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. 8. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. 9. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. 12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) (Note 2) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries. "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.
SALES OFFICES
Refer to "http://www.renesas.com/" for the latest and detailed information. Renesas Electronics America Inc. 2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A. Tel: +1-408-588-6000, Fax: +1-408-588-6130 Renesas Electronics Canada Limited 1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada Tel: +1-905-898-5441, Fax: +1-905-898-3220 Renesas Electronics Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K Tel: +44-1628-585-100, Fax: +44-1628-585-900 Renesas Electronics Europe GmbH Arcadiastrasse 10, 40472 Dusseldorf, Germany Tel: +49-211-65030, Fax: +49-211-6503-1327 Renesas Electronics (China) Co., Ltd. 7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China Tel: +86-10-8235-1155, Fax: +86-10-8235-7679 Renesas Electronics (Shanghai) Co., Ltd. Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898 Renesas Electronics Hong Kong Limited Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong Tel: +852-2886-9318, Fax: +852 2886-9022/9044 Renesas Electronics Taiwan Co., Ltd. 7F, No. 363 Fu Shing North Road Taipei, Taiwan Tel: +886-2-8175-9600, Fax: +886 2-8175-9670 Renesas Electronics Singapore Pte. Ltd. 1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632 Tel: +65-6213-0200, Fax: +65-6278-8001 Renesas Electronics Malaysia Sdn.Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: +60-3-7955-9390, Fax: +60-3-7955-9510 Renesas Electronics Korea Co., Ltd. 11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea Tel: +82-2-558-3737, Fax: +82-2-558-5141
http://www.renesas.com
(c) 2010 Renesas Electronics Corporation. All rights reserved. Colophon 1.0

▲Up To Search▲

Price & Availability of BCR16CS-16LBB00

	To Download BCR16CS-16LBB00 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .